STF2HNK60Z

STF2HNK60Z Datasheet N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) S(3) AM01476v1 Features Order codes VDS RDS(on) max. ID STF2HNK60Z 600 V 4.8 Ω 2A 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STF2HNK60Z Product summary Order code STF2HNK60Z Marking F2HNK60Z Package TO-220FP Packing Tube DS13846 - Rev 1 - October 2021 For further information contact your local STMicroelectronics sales office. www.st.com STF2HNK60Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT VISO Total power dissipation at TC = 25 °C Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope TST...