DatasheetsPDF.com

SSM3K303T

Toshiba Semiconductor
Part Number SSM3K303T
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 11, 2008
Detailed Description SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V...
Datasheet PDF File SSM3K303T PDF File

SSM3K303T
SSM3K303T

Overview
SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.
9 A 5.
8 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may c...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)