SSM3K301T

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage VDS VGSS 20 V ± 12 V /Package Drain current DC ID Pulse IDP 3.5 A 7.0 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-3S1A Weight: 10 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cutoff current Gat...