SSM3K04FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FV
High Speed Switching Applications
0.22±0...
SSM3K04FV
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K04FV
High Speed Switching Applications
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05
With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive High input impedance
1.2±0.05 0.8±0.05
0.4
Low gate threshold voltage: Vth = 0.7~1.3 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C
0.5±0.05
0.4
Optimum for high-density mounting in small packages www.DataSheet4U.com
1
1. Gate 2. Source 3. Drain
JEDEC
―
Note:
JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2L1B temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)
0.5mm 0.45mm 0.45m...