SSM3K04FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FS
High Speed Switch Applications
Unit: mm...
SSM3K04FS
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K04FS
High Speed Switch Applications
Unit: mm
With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
VDS VGSS
ID PD Tch Tstg
20
V
10
V
100
mA
100
mW
150
°C
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA TOSHIBA
― 2-2H1B
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Weight: 2.4 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01
SSM3K04FS
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Re...