WTC2308

WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value 60 ±20 3.0 2.3 10 1.38 90 -55~+150 Unit V ,(T A ,(T A ID IDM PD R JA A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ℃/W ℃ TJ, Tstg Device Marking WTC2308=2308 http:www.weitron.com.tw WEITRON 1/6 24-May-05 WTC2308 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,ID =250μA www.DataSheet4U.com Gate-Source Threshold Voltage VDS =VGS ,ID =250μA Gate-Source Leakage Current VGS = ±20V Drain- Source Leakage Current(Tj=25˚C) VDS =60V,VGS =0 Drain- Source Leakage Current(Tj=70˚C) VDS =48V,VGS =0 Drain-Source On-Resistance VGS =10V,ID =2A VGS =4.5V,ID =1.7A Forward Transconductance VDS =5 V,ID =3 A gfs RDS(on) 5.0 160 220 mΩ IDSS 25 V(BR)DSS VGS(Th) IGSS 60 1.0 V 3.0 ±100 10 μA nA S Dynamic Input Capacitance VGS =0V,VDS =25V,f=1.0MHz Output Capacitance VGS =0V,VDS =25V,f=1.0MHz Reverse Transf er Capacitanc e...