Document
WTC2306A
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
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Features:
SOURCE
2
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R θJA TJ , Tstg
Value
30 ± 12 5 4 20 1.38 90 - 55~+150
Unit
V
A
Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range
W ˚C/W ˚C
Device Marking
WTC2306A=2306A
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WTC2306A
Electrical Characteristics (TA = 25℃
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
www.DataSheet4U.com VGS =0,ID =250μA
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS =VGS ,ID =250μA Gate-Source Leakage Current VGS=±20V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =30V,VGS =0
V(BR)DSS VGS(Th) IGSS
30 0.5 -
-
V 1.2 ±100 1 μA 25 nA
Drain- Sou rce Leakage Current(Tj=70˚C) VDS =24V,VGS =0 Drain-Source On-Resistance VGS =10V,ID=5A VGS =4.5V,I D=5A VGS =2.5V,I D=2.6A VGS =1.8V,I D=1.0A Forward Transconductance VDS =5 V,ID =5A
IDSS -
R DS(o n)
-
13
30 35 50 90 -
mΩ
g fs
S
Dynamic
Input Capacitance VGS =0V,VDS =25V,f=1.0MHz Output Capacitance VGS =0V,VDS =25V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =25V,f=1.0MHz C iss C oss C rss 660 90 70 1050 pF
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WTC2306A
Switching
Turn-on Delay Time2 VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Rise Time VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Turn-o ff De lay Time VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω www.DataSheet4U.com Fall T ime VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Total Gate Charge 2 VDS=16V,VGS=4.5,ID=5.0A Gate-Source C harge VDS=16V,VGS=4.5,ID=5.0A Gate-Drain C hange VDS=16V,VGS=4.5,ID=5.0A t d (on) 6 20 20 3 8.7 1.5 3.2 ns t d (off) 15 nC
tr
tf
Qg Q gs Q gd
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS=0,IS=1.2A
VSD
2
-
14 7
1.2 -
V nS nC
Reverse Recovery Time VGS =0,I S =5A,dl/dt=100A/ s Reverse Recovery Charge VGS =0,I S =5A,dl/dt=100A/ s
Trr Q rr
Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
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WTC2306A
80 50
TA=25°C
5.0V 4.5V
TA=125°C
ID ,DRAIN CURRENT (A)
60
ID ,Drain Current (A)
4.0V
40
5.0V 4.5V
30
4.0V
40
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20
VG=2.5V
20
VG=2.5V
10
0
0
1
2
3
4
5
6
7
0
0
1
FIG.1 Typical Output Characteristics
100 1.8
VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
VDS ,Drain-to-source Voltage(V)
2
3
4
5
6
7
8
80
I D = .