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WTC2306A Dataheets PDF



Part Number WTC2306A
Manufacturers Weitron Technology
Logo Weitron Technology
Description Enhancement Mode Power MOSFET
Datasheet WTC2306A DatasheetWTC2306A Datasheet (PDF)

WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current 1,2 Unless Otherwise Specified).

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WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R θJA TJ , Tstg Value 30 ± 12 5 4 20 1.38 90 - 55~+150 Unit V A Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC2306A=2306A http:www.weitron.com.tw WEITRON 1/6 13-May-05 WTC2306A Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static www.DataSheet4U.com VGS =0,ID =250μA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS =VGS ,ID =250μA Gate-Source Leakage Current VGS=±20V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =30V,VGS =0 V(BR)DSS VGS(Th) IGSS 30 0.5 - - V 1.2 ±100 1 μA 25 nA Drain- Sou rce Leakage Current(Tj=70˚C) VDS =24V,VGS =0 Drain-Source On-Resistance VGS =10V,ID=5A VGS =4.5V,I D=5A VGS =2.5V,I D=2.6A VGS =1.8V,I D=1.0A Forward Transconductance VDS =5 V,ID =5A IDSS - R DS(o n) - 13 30 35 50 90 - mΩ g fs S Dynamic Input Capacitance VGS =0V,VDS =25V,f=1.0MHz Output Capacitance VGS =0V,VDS =25V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =25V,f=1.0MHz C iss C oss C rss 660 90 70 1050 pF http:www.weitron.com.tw WEITRON 2/6 13-May-05 WTC2306A Switching Turn-on Delay Time2 VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Rise Time VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Turn-o ff De lay Time VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω www.DataSheet4U.com Fall T ime VDS=15V,VGS=10V,ID=5A,RD=3Ω,RG=3.3Ω Total Gate Charge 2 VDS=16V,VGS=4.5,ID=5.0A Gate-Source C harge VDS=16V,VGS=4.5,ID=5.0A Gate-Drain C hange VDS=16V,VGS=4.5,ID=5.0A t d (on) 6 20 20 3 8.7 1.5 3.2 ns t d (off) 15 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS=0,IS=1.2A VSD 2 - 14 7 1.2 - V nS nC Reverse Recovery Time VGS =0,I S =5A,dl/dt=100A/ s Reverse Recovery Charge VGS =0,I S =5A,dl/dt=100A/ s Trr Q rr Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 13-May-05 WTC2306A 80 50 TA=25°C 5.0V 4.5V TA=125°C ID ,DRAIN CURRENT (A) 60 ID ,Drain Current (A) 4.0V 40 5.0V 4.5V 30 4.0V 40 www.DataSheet4U.com 20 VG=2.5V 20 VG=2.5V 10 0 0 1 2 3 4 5 6 7 0 0 1 FIG.1 Typical Output Characteristics 100 1.8 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 2 3 4 5 6 7 8 80 I D = .


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