WTC2305A

WTC2305A P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 www.DataSheet4U.com Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A ,(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -3.2 -2.6 -10 1.38 90 -55~+150 Unit V A Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range 3 W ˚C/W ˚C Device Marking WTC2305A=2305A http:www.weitron.com.tw WEITRON 1/6 23-May-05 WTC2305A Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA www.DataSheet4U.com Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage Current VGS = ±12V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =-30V,V GS =0 Drain- Sou rce Leakage Current(Tj=70˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS =-10V,I D=-3.2A VGS =-4.5V,I D=-3.0A VGS =-2.5V,I D=-2.0A VGS =-1.8V,I D=-1.0A Forward Transconductance VDS =-5V, ID =-3A g fs R DS(o n) 9 60 80 150 250 mΩ I DSS -25 V(BR)DSS VGS(Th) I GSS -30 -0.5 V -1.2 ±100 -1 μA nA S Dynamic Inp...