WTC2301

WTC2301 P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T stg Value -20 ±8 -2.3 -8 0.9 0.57 140 100 150 150 150 -55~+150 Unit V A A W ˚C /W ˚C /W ˚C ˚C ˚C ˚C Total Po wer Dis sipation(T A =25˚C) (T A =75˚C) Maximum Junction-ambient 3 Maximum Junction-case Ambient Temperature Case Temperature Operating Junction Temperature Range www.DataSheet4U.com Storage Temperature Range Device Marking WTC2301 = 01 WEITRON http://www.weitron.com.tw 1/6 Rev.D 29-Mar-10 WTC2301 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source L eakage C urrent VGS = ±8 V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =-9.6V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-2.8A VGS =-2.5V,I D=-2.0A Forward Transconductance VDS =-5.0 V, ID =-4.0A g fs R DS(o n) 69 83 6.5 100 150 mΩ V...