3A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 784, REV. A
SHD850003D
3A-Peak Low Side MOSFET Driver Bipolar/CMOS/D...
Description
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 784, REV. A
SHD850003D
3A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process
FEATURES: CMOS Construction Similar to Industry Part Number MIC4424 Low Output Impedance, 3.5 Ohms
www.DataSheet4U.com
Latch-Up Protected; Will Withstand > 500mA Reverse Output Current Logic Input Withstands Negative Swing of Up to -5V
MAXIMUM RATINGS
RATING Power Dissipation (TC = 25°C) Derating Factors (CerDip) Storage Temperature Lead Temperature (10sec) Supply Voltage Input Voltage, (V S + 0.3V to Ground –5.0) Input Current (V IN >VS) MIN. -65 -1.0 TYP. MAX. 1250 12.5 +150 300 22 -5.0 1.0 UNITS mW mW/ °C °C °C Volts Volts mA
ELECTRICAL CHARACTERISTICS
RATING Logic 1 Input Voltage Logic 0 Input Voltage Input Voltage Range Input Current, (0V ≤ VIN ≤ VS) High Output Voltage Low Output Voltage Output Resistance, Output High, (IOUT = 10mA, Vs = 18V) Output Resistance, Output Low, (IOUT = 10mA, Vs = 18V) Peak Output Current VS = 18V Latch-Up Protection; withstand reverse current. Rise Time, (CL = 1800 pF) Fall Time, (CL = 1800 pF) Delay Time, Rise (CL = 1800 pF) Delay Time, Fall (CL = 1800 pF) Power Supply Current, (V IN = 3.0V) (V IN = 0V) Operating Input Voltage SYMBOL VIH VIL VIN IIN VOH VOL RO RO IPK IR tR tF td1 td2 IS VS
TA = 25°C with 4.5V ≤ V S ≤ 18V otherwise specified.
MIN. 2.4 0 -1.0 VS -0.025 >500 4.5
TYP. 2.8 3.5 3.0 23 25 33 38 1.5 0.15 -
MAX. 0.8 VS 1.0 0.025 5.0 5.0 35 35 75 75 2.5 0.25 18
UNITS Volts Volts Volts...
Similar Datasheet