HL7852G

HL7852G GaAlAs Laser Diode Description www.DataSheet4U.com structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. The HL7852G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) Features Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 mW (CW) Built-in monitor photodiode 177 HL7852G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulsed optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 50 60* 2 30 –10 to +60 –40 to +85 1 Unit mW mW V V °C °C 1. Maximum 50% duty cycle, maximum 1 µs pulse width www.DataSheet4U.com Item Optical and Electrical Characteristics (TC = 25°C) Symbol PO Ith η Iop Vop λp θ// θ⊥ Is AS Min 50 — 0.35 — — 775 8 18 25 — Typ — 45 0.55 140 2.3 785 9.5 23 — 5 Max — 70 0.7 170 2.7 795 12 28 150 — Unit mW mA mW/mA mA V nm deg. deg. µA µm 40 mW/ I (45 mW) – I (5 mW) PO = 50 mW PO = 50 mW PO = 50 mW PO = 50 mW, FWHM PO = 50 mW, FWHM PO = 5 mW, VR (PD) = 5 V PO = 5 mW, NA = 0.4 Test Conditions Kink free Optical output power Threshold current Slope efficiency Operating current LD Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism 178 HL7852G Typical Chara...