STD3NA50
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD3NA50
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s s s s s
V DSS 500 V
R DS( on) < 3Ω
ID 2.7 A
s
s
TYPICAL RDS(on) = 2.4 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) S...