®
STW7NA80 STH7NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 7NA80 STH7NA80F I www.DataSheet4...
®
STW7NA80 STH7NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STW 7NA80 STH7NA80F I www.DataSheet4U.com
s s s s s s s
V DSS 800 V 800 V
R DS(on) < 1.9 Ω < 1.9 Ω
ID 6.5 A 4 A
TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
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TO-247 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Valu e ST W7NA80 V DS V DGR V GS ID ID I DM ( ) P tot V ISO Ts tg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V
o o
6.5 4 26 150 1.2 -65 to 150 150
C C
() Pulse width limited by safe operating area
October 1998
1/10
STW7NA80-STH7NA80FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Therma...