Document
P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 20-Pin 300 mil DIP – 20-Pin 300 mil SOJ – 20-Pin LCC
Low Power Operation Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C167L Military)
DESCRIPTION
The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10µA. Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to low levels. The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P2, C6) SOJ (J2) SIMILAR
LCC (L9)
Document # SRAM106 REV A 1 Revised October 2005
P4C167
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value –0.5 to +7 –0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value –55 to +125 –65 to +150 1.0 50 Unit °C °C W mA
VTERM TA
V °C
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
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CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ. Unit VIN = 0V VOUT = 0V 5 7 pF pF
Ambient Temperature
GND 0V 0V 0V
VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10%
Military
–55°C to +125°C –40°C to +85°C Industrial 0°C to +70°C Commercial
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = –18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = –4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE = VIH, VOUT = GND to VCC Mil. Com’l. Mil. Com’l. 2.4 –10 –5 –10 –5 ___ ___ ___ ___ +10 +5 +10 +5 30 20 15 10 Test Conditions P4C167 Min Max 2.2 VCC +0.5 –0.5(3) –0.5(3) 0.8 0.2 –1.2 0.4 2.4 –5 n/a –5 n/a ___ ___ ___ ___ +5 n/a +5 n/a 20 n/a 1.0 n/a P4C167L Unit Min Max 2.2 VCC +0.5 V –0.5(3) –0.5(3) 0.8 0.2 –1.2 0.4 V V V V V V µA µA mA
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5
CE ≥ VIH Mil. Standby Power Supply VCC = Max ., Ind./Com’l. Current (TTL Input Levels) f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE ≥ VHC Mil. VCC = Max., Ind./Com’l. f = 0, Outputs Open VIN ≤ VLC or VIN ≥ VHC
mA
ISB1
n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested.
Document # SRAM106 REV A
Page 2 of 10
P4C167
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol Parameter Temperature Range Commercial Industrial Military –10 180 N/A N/A –12 170 180 N/A –15 160 170 170 –20 155 160 160 –25 150 155 155 –35 N/A 150 150 –45 N/A N/A 145 Unit mA mA mA
ICC
Dynamic Operating Current*
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL.
DATA RETENTION CHARACTERISTICS (P4C167L Military Temperature Only)
Symbol
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Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
Test Conditons
Min 2.0
Typ.* VCC = 2.0V 3.0V
Max VCC = 2.0V 3.0V
Unit V
VDR ICCDR tCDR tR†
*TA = +25¹C
CE ≥ VCC –0.2V, VIN ≥ VCC –0.2V or VIN ≤ 0.2V 0 tRC§
10
15
600
900
µA ns ns
§tRC = Read Cycle Time
†
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document # SRAM106 REV A
Page 3 of 10
P4C167
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol tRC tAA tAC tOH tLZ
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change
–10.