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P4C167 Dataheets PDF



Part Number P4C167
Manufacturers Pyramid Semiconductor Corporation
Logo Pyramid Semiconductor Corporation
Description ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
Datasheet P4C167 DatasheetP4C167 Datasheet (PDF)

P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) www.DataSheet4U.com Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 20-Pin 300 mil DIP – 20-Pin 300 mil SOJ – 20-Pin LCC Low Power Operation Single 5V±10% Power Supply Data Retention with 2.0V Supply .

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P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) www.DataSheet4U.com Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 20-Pin 300 mil DIP – 20-Pin 300 mil SOJ – 20-Pin LCC Low Power Operation Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C167L Military) DESCRIPTION The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10µA. Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to low levels. The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS DIP (P2, C6) SOJ (J2) SIMILAR LCC (L9) Document # SRAM106 REV A 1 Revised October 2005 P4C167 MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value –0.5 to +7 –0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value –55 to +125 –65 to +150 1.0 50 Unit °C °C W mA VTERM TA V °C RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) www.DataSheet4U.com CAPACITANCES(4) VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ. Unit VIN = 0V VOUT = 0V 5 7 pF pF Ambient Temperature GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10% Military –55°C to +125°C –40°C to +85°C Industrial 0°C to +70°C Commercial DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = –18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = –4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE = VIH, VOUT = GND to VCC Mil. Com’l. Mil. Com’l. 2.4 –10 –5 –10 –5 ___ ___ ___ ___ +10 +5 +10 +5 30 20 15 10 Test Conditions P4C167 Min Max 2.2 VCC +0.5 –0.5(3) –0.5(3) 0.8 0.2 –1.2 0.4 2.4 –5 n/a –5 n/a ___ ___ ___ ___ +5 n/a +5 n/a 20 n/a 1.0 n/a P4C167L Unit Min Max 2.2 VCC +0.5 V –0.5(3) –0.5(3) 0.8 0.2 –1.2 0.4 V V V V V V µA µA mA VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5 CE ≥ VIH Mil. Standby Power Supply VCC = Max ., Ind./Com’l. Current (TTL Input Levels) f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE ≥ VHC Mil. VCC = Max., Ind./Com’l. f = 0, Outputs Open VIN ≤ VLC or VIN ≥ VHC mA ISB1 n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. Document # SRAM106 REV A Page 2 of 10 P4C167 POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter Temperature Range Commercial Industrial Military –10 180 N/A N/A –12 170 180 N/A –15 160 170 170 –20 155 160 160 –25 150 155 155 –35 N/A 150 150 –45 N/A N/A 145 Unit mA mA mA ICC Dynamic Operating Current* *VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL. DATA RETENTION CHARACTERISTICS (P4C167L Military Temperature Only) Symbol www.DataSheet4U.com Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons Min 2.0 Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V Unit V VDR ICCDR tCDR tR† *TA = +25¹C CE ≥ VCC –0.2V, VIN ≥ VCC –0.2V or VIN ≤ 0.2V 0 tRC§ 10 15 600 900 µA ns ns §tRC = Read Cycle Time † This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM Document # SRAM106 REV A Page 3 of 10 P4C167 AC CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Symbol tRC tAA tAC tOH tLZ Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change –10.


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