P-Channel 1.8-V (G-S) MOSFET
P-Channel 1.8 V (G-S) MOSFET
Si1307DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.290 at VGS = - 4.5...
Description
P-Channel 1.8 V (G-S) MOSFET
Si1307DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.290 at VGS = - 4.5 V 0.435 at VGS = - 2.5 V 0.580 at VGS = - 1.8 V
ID (A) ± 0.91 ± 0.74 ± 0.64
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC
SOT-323 SC-70 (3-LEADS)
G1
3D
S2
YY
LC XX
Lot Traceability and Date Code
Part # Code
Top View
Ordering Information: Si1307DL-T1-E3 (Lead (Pb)-free) Si1307DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Diode Current (Diode Conduction)a
TA = 25 °C TA = 70 °C
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, Tstg
- 12
±8
± 0.91
± 0.85
± 0.72
± 0.68
±3
- 0.28
- 0.24
0.34 0.29
0.22 0.19
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typical 315 360 285
Maximum 375 430 340
Unit °C/W
Document Number: 71077 S10-0721-Rev. B, 29-Mar-10
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Si1307DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
S...
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