IR2213

Preliminary Data Sheet No. PD60030 rev.O IR2213(S) & (PbF) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation www.DataSheet4U.com Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 1200V max. 1.7A / 2A 12 - 20V 280 & 225 ns 30 ns Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Also available LEAD-FREE (PbF) Packages Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary 16-Lead SOIC HVIC and latch immune CMOS technologies enable (wide body) ruggedized monolithic construction. Logic inputs are 14-Lead PDIP compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 volts. Typical Connection HO V DD HIN SD LIN V SS V C...