D2389

Equivalent circuit C Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2389 160 150 5 8 1 80(Tc=25°C) 150 –55 to +150 2SD2389 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2389 100max 100max 150min 5000min∗ 2.5max 3.0max 80typ 85typ V V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) (Ta=25°C) Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 2.0 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 0.65 +0.2 -0.1 1.4 www.DataSheet4U.com sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 10 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) IB1 (mA) 6 IB2 (mA) –6 ton (µs) 0.6typ tstg (µs) 10.0typ tf (µs) 0.9typ Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5m 2. A 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 8 (V CE =4V) 10mA 8 2. 1. A 8m 1.5m A 1. 3m A Collector Current I C (A) 0.8 mA 2 4 I C =8A I C =6A 1 I C =4A Collector Current I C (A) 6 1.0m A 6 4 mp...