VRF154FL

VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion. www.DataSheet4U.com FEATURES Designed For 2 - 100MHz Operation 600W with 17dB Typical Gain @ 30MHz, 50V Excellent Stability & Low IMD Common Source Configuration Economical Flangeless Package Nitride Passivated Refractory Gold Metallization Maximum Ratings Symbol VDD VDGO ID VGS PD TSTG TJ All Ratings: TC = 25°C unless otherwise specified VRF154FL 160 160 60 ±40 1350 -65 to 150 200 Unit Volts Amps Volts Watts °C Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) Min 160 Typ 180 3.0 Max 5.0 20 5.0 5 Unit Volts mA µA mhos Volts 11-2006 050-4939 Rev A 16 2 Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resi...