NPT IGBT Modules
SII50N06
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
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TC = 25oC, unless otherwise specified Co...
Description
SII50N06
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
www.DataSheet4U.com
TC = 25oC, unless otherwise specified Conditions
Values 600 75(50) 100 280 _ +20 600 50 100 450 2500
Absolute Maximum Ratings Symbol
Units V A A W V
V A A
IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(80)oC, Tvj= 150oC ICRM TC= 80oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC
VGES Diode Wechselrichter/ Diode Inverter VRRM IF IFRM tP =1ms VR=0V, tP =10ms; TVj=125oC I2t Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate
As
V
2
Sirectifier
R
SII50N06
NPT IGBT Modules
Characteristics
Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.0mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres IC =300A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) 2.1(2.4) 2.2 0.2
40 225
max. 6.5 500 400 2.6(2.9)
Units V uA nA V nF
nH A
LCE o www.DataSheet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 50A tr RGon = RGoff =2.7 , , Tj = 25(125)oC td(off) VGE = ± 15V tf
40(42) 9(10) 120(130) 12(21) 0.5(1.0)
1.2 0.44
ns ns ns ns mJ
m K/W
Eon(Eoff)
RCC'+EE'
Tj = 25(125)oC, LS = 35nH
RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 50A; VGE = 0V; Tj = 25(125)oC IRM IF = 50A; Tj = 25(125)oC Qr -di/dt = 2900A/us Erec VGE = -10V, VR=300V RthJC RthCK...
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