SII150N12

SII150N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 210(150) 420(300) _ +20 1250 _ 40...+125(150) 2500 _ < 0.1 o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min V K/W _ 0.25 < Sirectifier R SII150N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =6mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =150A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.com gfs VCE=20V, IC=150A Switching Characteristics td(on) VCC = 600V, IC = 150A tr RGon = RGoff =5.6 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 150A, VGE = 0V, Tj = 25(125)oC trr IF=150A, VR= _600V,VGE=0V,di/dt=_ 1500A/us,Tj = 125oC _ IF = 150A, VGE = 0V, VR= 600V Qrr _ di/dt= 1500A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 2(8) 2.5(3.1) 11 1.6 0.6 62 max. 6.5 2.8 320 3(3.7) Units V mA nA V nF S 200 100 600 70 2.3(1.8) 0.4 5(18) 400 200 800 100 2.8 ns V us uC Mechanical Data 5 5 325 Nm Nm g Sirectifier R SII150N12 NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 1300 W 1100 Ptot 1000 900 ...