2SK3507

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3507 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3507 is N-channel MOS FET device that features www.DataSheet4U.com a low on-state resistance and excellent switching characteristics, ORDERING INFORMATION PART NUMBER 2SK3507-ZK PACKAGE TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES 4.5 V drive available Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) Built-in G-S protection diode Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±16 ±22 ±45 20 1.5 150 −55 to +150 10 10 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with ...