2SJ291
Silicon P-Channel MOS FET
November 1996
www.DataSheet4U.com
Application
High speed power switching
Features
• ...
2SJ291
Silicon P-Channel MOS FET
November 1996
www.DataSheet4U.com
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching
regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
www.DataSheet4U.com Avalanche current
Symbol VDSS VGSS ID ID(pulse)* IDR IAP*
3 1
Ratings –60 ±20 –20 –80 –20 –20
Unit V V A A A A mJ W °C °C
Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
EAR* Tch
3
34
2
Pch*
60 150 –55 to +150
Tstg
2
2SJ291
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
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Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) –60 ±20 — — –1.0 — —
Typ — — — — — 0.05 0.07 16 2200 1000 300 25 130 320 210 –1.1 160
Max — — ±10 –250 –2.25 0.065 0.095 — — — — — — — — — —
Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns
Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V* ID = –10 A, VGS =...