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BAV17

Galaxy Semi-Conductor

(BAVxx) SMALL SIGNAL SWITCHING DIODE

BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Sil...


Galaxy Semi-Conductor

BAV17

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BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation DO - 35(GLASS) www.DataSheet4U.com MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 gram s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current Half w ave rectification w ith resist.load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Thermal resistance junction to ambient Junction temperature Storage temperature range VR V RM I(AV) IFSM P tot RθJA TJ TSTG BAV17 20 25 BAV18 50 60 BAV19 100 120 250 1) 1.0 500 350 175 -55 --- +175 1) BAV20 150 200 BAV21 200 250 UNITS V V mA A mW K/W 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=100mA Leakage current at reverse voltage @Tj=25 @Tj=100 f=1MHZ VF IR CJ t rr MIN - TYP 1.5 - MAX 1.0 UNITS V 100 15 50 nA µA pF ns www.galaxycn.com Capacitance @ V F=V R=0V Reverse recovery time from IF=30mA to IR=30mA from IRR=3mA, RL=100Ω. 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. Document Number 0268008 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACT...




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