N-CHANNEL Power MOSFET
STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power ...
Description
STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
General features
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Type
VDSS (@TJ=TJmax) 650V 650V 650V 650V
RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω
ID
3
STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1
■ ■ ■ ■
11A 11A 11A 11A TO-220
1
2
3 1 2
TO-220FP
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1
3
3 12
D2PAK
i2PAK
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP Marking B11NM60 B11NM60-1 P11NM60 P11NM60FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube
January 2007
Rev 6
1/16
www.st.com 16
Contents
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . ...
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