DatasheetsPDF.com
IXSA10N60B2D1
High Speed IGBT
Description
High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, ...
IXYS Corporation
Download IXSA10N60B2D1 Datasheet
Similar Datasheet
IXSA10N60B2D1
High Speed IGBT
- IXYS Corporation
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)