CGH40010

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in both screw-down, flange and solderdown, pill packages. Package Type s: 440166, & 440196 PN’s: CGH40 010F & CGH 40010P FEATURES Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms il 2007 Rev 1.4 – Apr Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ IGMAX TS RθJC Rating 84 -10, +2 -55, +150 175 4.0 245 5.0 Units Volts Volts ˚C ˚C mA ˚C ˚C/W www.DataSheet4U.com Note: 1 Measured for the CGH40010F at PDISS = 14 W. ...