CGH35030F

PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.7GHz Parameter Small Signal Gain EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 10.9 1.9 20.8 11.4 11.1 1.9 20.8 8.2 (TC = 25˚C) of Demonstration Amplifier 3.6 GHz 10.7 2.0 22.7 4.0 3.7 GHz 10.8 2.0 23.9 3.7 Units dB % % dB 3.4 GHz 3.5 GHz 10.9 1.9 21.6 5.3 Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Features 2007 Rev 1.4 – May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS V...