L2SA1576AxT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR L2SA1576A*T1 3 www.DataSheet4U.com 1 BASE 1 2 EMITTER 2 SC-70/SOT– 323 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V EBO Value –50 –60 –6.0 –150 0.2 150 -55 ~+150 Unit V V V mAdc W °C °C IC PC Tj T stg DEVICE MARKING L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE fT C ob — 120 — — — –– 140 4.0 -0.5 560 –– 5.0 V –– MHz pF Symbol V (BR)CEO Min – 50 –6 – 60 — — Typ — — — — — Max — — — – 0.1 – 0.1 Unit V V V µA µA V (BR)EBO V (BR)CBO I CBO I EBO h FE values are classified as follows: hFE * Q 120~270 R 180~390 S 270~560 L2SA1576A*T1–1/4 LESHAN RADIO COMPANY, LTD. L2SA1576A*T1 Fig.1 Grounded emitter propagation characteristics –50 Fig.2 Grounded emitter output characteristics( ) ...