RKR104BKH

RKR104BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1476-0200 Rev.2.00 Mar 25, 2008 Features Low reverse current and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. www.DataSheet4U.com Ordering Information Part No. RKR104BKH Laser Mark S4 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S4 2 1. Cathode 2. Anode REJ03G1476-0200 Rev.2.00 Mar 25, 2008 Page 1 of 5 RKR104BKH Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM VR IO *2 IFSM *1 Tj Tstg Value 40 40 1 5 150 −55 to +150 Unit V V A A °C °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 36°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm) Short form wave (θ180°C), VR = 20 V. www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min — — — — — — — Typ — — — — — 100 200 Max 0.37 0.55 10 50 35 — — Unit V μA pF °C/W Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 40 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2 Notes: 1. Ceramics board 2.0 0.5 2.0 0.3 2.0 50h × 50w × 0.8t Unit: mm 1.0 2. Glass epoxy board 6.0 0.5 6.0 0.3 2.0 50h × 50w × 0.8t Unit: mm 1.0 3. TUR...