Document
MT6L71FS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L71FS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
Unit: mm
1.0±0.05
0.7±0.05
• • •
Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free.
1 2 3
6 5 4 0.1±0.05
Mounted Devices
www.DataSheet4U.com
Q1 Corresponding three-pin products: fSM mold products MT3S07FS Q2 MT3S11AFS
0.48
+0.02 -0.04
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg 10 5 1.5 25 10 100 Rating Q2 13 6 1 40 10 90 mW 105 (Note 2) 125 −55~125 °C °C V V V mA mA Unit
fS6
1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)
JEDEC JEITA TOSHIBA Weight: 0.001g (typ.)
― ― 2-1F1A
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Note 2: During two-element operation.
Marking (top view)
6 5 4
Pin Assignment (top view)
B1 E2 B2
1W
1 2 3
Q1
Q2
C1
E1
C2
1
2005-08-01
MT6L71FS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA
2
Min
Typ.
Max 0.1 1 140 0.65
Unit
⎯ ⎯
70
⎯ ⎯ ⎯
0.4 12 8 10 1.5
µA µA ⎯
pF GHz dB dB
⎯
10
⎯ ⎯ ⎯
3
⎪S21e⎪ (1) ⎪S21e⎪2 (2)
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
7.5
⎯
www.DataSheet4U.com
Electrical Characteristics Q2 (Ta = 25°C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA
2 2
Min
Typ.
Max 0.1 1 160 0.85
Unit
⎯ ⎯
100
⎯ ⎯ ⎯
0.6 6 3.5 6.5 2.4
µA µA ⎯
pF GHz dB dB
⎯
4
⎯ ⎯ ⎯
3.2
⎪S21e⎪ (1) ⎪S21e⎪ (2)
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
4
⎯
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact .