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MT6L71FS Dataheets PDF



Part Number MT6L71FS
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description VHF-UHF Band Low Noise Amplifier Application
Datasheet MT6L71FS DatasheetMT6L71FS Datasheet (PDF)

MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 1.0±0.05 0.7±0.05 • • • Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free. 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Corresponding three-pin products: fSM m.

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MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 1.0±0.05 0.7±0.05 • • • Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free. 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Corresponding three-pin products: fSM mold products MT3S07FS Q2 MT3S11AFS 0.48 +0.02 -0.04 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg 10 5 1.5 25 10 100 Rating Q2 13 6 1 40 10 90 mW 105 (Note 2) 125 −55~125 °C °C V V V mA mA Unit fS6 1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1) JEDEC JEITA TOSHIBA Weight: 0.001g (typ.) ― ― 2-1F1A Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Note 2: During two-element operation. Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 1W 1 2 3 Q1 Q2 C1 E1 C2 1 2005-08-01 MT6L71FS Electrical Characteristics Q1 (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA 2 Min Typ. Max 0.1 1 140 0.65 Unit ⎯ ⎯ 70 ⎯ ⎯ ⎯ 0.4 12 8 10 1.5 µA µA ⎯ pF GHz dB dB ⎯ 10 ⎯ ⎯ ⎯ 3 ⎪S21e⎪ (1) ⎪S21e⎪2 (2) NF VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 7.5 ⎯ www.DataSheet4U.com Electrical Characteristics Q2 (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA 2 2 Min Typ. Max 0.1 1 160 0.85 Unit ⎯ ⎯ 100 ⎯ ⎯ ⎯ 0.6 6 3.5 6.5 2.4 µA µA ⎯ pF GHz dB dB ⎯ 4 ⎯ ⎯ ⎯ 3.2 ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 4 ⎯ Note: Cre is measured with a three-terminal method using a capacitance bridge. Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact .


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