IXGH38N60U1

Ultra-Low VCE(sat) IGBT with Diode IXGH 38N60U1 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V Combi Pack www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µ H TC = 25°C Maximum Ratings 600 600 ±20 ±30 76 38 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247 AD V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125° C 5.5 500 8 ±100 1.8 V V µA mA nA V BV CES V GE(th) I CES I GES V CE(sat) IC IC = 750 µ A, VGE = 0 V = 250 µ A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l VCE = 0.8...