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T70HF40 Dataheets PDF



Part Number T70HF40
Manufacturers International Rectifier
Logo International Rectifier
Description 400V Single Diode
Datasheet T70HF40 DatasheetT70HF40 Datasheet (PDF)

Bulletin I27106 rev. B 02/02 T..HF SERIES www.DataSheet4U.com POWER RECTIFIER DIODES Features Electrically isolated base plate Types up to 1200 V RRM 3500 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved T-Modules 40 A 70 A 85 A 110 A Description These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsin.

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Bulletin I27106 rev. B 02/02 T..HF SERIES www.DataSheet4U.com POWER RECTIFIER DIODES Features Electrically isolated base plate Types up to 1200 V RRM 3500 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved T-Modules 40 A 70 A 85 A 110 A Description These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. Major Ratings and Characteristics Parameters IF(AV) IF(RMS) IFSM I t 2 T40HF T70HF T85HF T110HF Units 40 63 70 110 1200 1250 7100 6450 85 134 1700 1800 14500 13500 110 173 2000 2100 20500 18600 A o C 50Hz 60Hz 50Hz 60Hz 570 600 1630 1500 16300 A A A2s A2s A2√s V o I √t VRRM range TJ 2 70700 148700 204300 100 to 1200 -40 to 150 C www.irf.com 1 T..HF Series Bulletin I27106 rev. B 02/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 10 VRRM , maximum repetitive peak reverse voltage V 100 200 400 600 800 1000 1200 VRSM , maximum non-repetitive peak reverse voltage V 150 300 500 700 900 1100 1300 IRRM max. TJ= @ 25°C µA www.DataSheet4U.com T40HF.. T70HF.. T85HF.. T110HF.. 20 40 60 80 100 120 100 Forward Conduction Parameters IF(AV) Max. average fwd current @ Case temperature IF(RMS) Max. RMS forward current IFSM Max. peak, one-cycle forward,non-repetitive surge current I2t Maximum I2t for fusing T40HF T70HF T85HF T110HF Units Conditions 40 85 63 570 600 480 500 1630 1500 1150 1050 I2√t Maximum I2√t for fusing voltage VF(TO)2 High level value of threshold voltage rf1 rf2 VFM Low level value of forward slope resistance High level value of forward slope resistance Max. forward voltage drop 1.30 1.35 1.27 1.35 V IFM = π x IF(AV), TJ = 25 oC, tp = 400 µs square pulse Av. power = VF(TO) x IF(AV) + rf x (IF(RMS))2 3.1 1.7 1.08 1.12 (I > π x IF(AV)), @ TJ max. 4.3 2.4 1.76 1.56 m Ω (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. 0.84 0.95 0.90 0.86 (I > π x IF(AV)), @ TJ max. 70 85 110 1200 1250 1000 1050 7100 6450 5000 4570 85 85 134 1700 1800 1450 1500 14500 13500 10500 9600 110 85 173 2000 2100 1700 1780 20500 18600 14500 13200 A o 180o conduction, half sine wave C A A t = 10ms t = 10ms A2s t = 10ms t = 10ms No voltage 100% VRRM Sinusoidal half wave, Initial TJ = TJ max. No voltage 100% VRRM t = 8.3ms reapplied t = 8.3ms reapplied t = 8.3ms reapplied t = 8.3ms reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. 16300 70700 148700 204300 A2√s t = 0.1 to 10ms, no voltage reapplied 0.66 0.76 0.68 0.68 V VF(TO)1 Low level value of threshold Blocking Parameters IRRM VINS Max. peak reverse leakage current RMS isolation voltage 3500 3500 3500 3500 V 50Hz, circuit to base, all terminals shorted TJ = 25 oC , t = 1s T40HF T70HF T85HF T110HF Units Conditions 15 15 20 20 mA TJ = 150 oC 2 www.irf.com T..HF Series Bulletin I27106 rev. B 02/02 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices T40HF Sinusoidal conduction @ TJ max. 180o 0.12 0.09 0.08 0.05 120o 0.14 0.11 0.09 0.07 90o 0.18 0.14 0.12 0.09 60o 0.27 0.20 0.18 0.14 30o 0.46 0.35 0.31 0.23 180o 0.09 0.07 0.06 0.05 Rectangular conduction @ TJ max. 120o 0.15 0.11 0.10 0.08 90o 0.20 0.15 0.13 0.10 60o 0.28 0.21 0.19 0.15 30o 0.46 0.35 0.31 0.24 Units K/W www.DataSheet4U.com T70HF T85HF T110HF Thermal and Mechanical Specifications Parameters TJ Tstg RthJC RthCS T wt Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting to heatsink 1.3 ± 10% 3 ± 10% 54 D-56 Nm g M3.5 mounting screws (2) M5 screw terminals See outline table T type torque ± 10% terminals Approximate weight Case style non lubricated threads 0.2 K/W Mounting surface smooth, flat and greased 1.36 0.69 0.62 0.47 K/W DC operation, per junction -40 to 150 °C T40HF T70HF T85HF T110HF -40 to 150 Units °C Conditions (2) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound Ordering Information Table Circuit configuration ** T 1 110 2 HF 120 4 Device Code 3 1 2 3 4 - Module type Current rating Circuit configuration ** Voltage code : code x 10 = VRRM www.irf.com 3 T..HF Series Bulletin I27106 rev. B 02/02 Outline Table www.DataSheet4U.com All dimensions in millimeters (inches) M axim um Allow a ble C ase Tem p era ture ( C ) 140 130 120 110 100 90 80 70 60 0 10 T40HF.. Series R thJC (DC ) = 1.36 K/W M axim um Allow ab le C ase Te m pe ra tu re ( C ) 150 150 140 130 120 110 100 90 80 70 60 0 10 20 30 40 50 60 70 A v erag e Fo rw a rd C urrent (A ) 30 60 90 120 1 80 DC C o nd uc t.


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