2SB1672
Transistors
Power Transistor (−80V, −7A)
2SB1672
!Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at...
2SB1672
Transistors
Power
Transistor (−80V, −7A)
2SB1672
!Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) www.DataSheet4U.com 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C). 4) Wide SOA (safe operating area). 5) Complements the 2SD2611. !External dimensions (Units : mm)
10.0
4.5
φ 3.2
2.8
15.0 12.0
8.0 5.0
1.2
14.0
1.3 0.8
2.54
2.54
(1) (2) (3) (1) (2) (3)
0.75
2.6
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse,
Pw=100ms
ROHM : TO-220FN
Unit V V V A(DC) A(Pulse) W W(Tc=25°C) °C °C *
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits −80 −80 −5 −7 −10 2 30 150 −55 ∼ +150
!Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SB1672 TO-220FN EF − 500
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. −80 −80 −5 − − − − 100 − − Typ. − − − − − − − − 12 200 Max. − − − −10 −10 −1 −1.5 320 − − Unit V V V µA µA V V − MHz pF IC = −50µA IC = −1mA IE = −50...
