Document
Bulletin I27132 rev. I 09/04
IRK.71, .91 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
www.DataSheet4U.com
ADD-A-pakTM GEN V Power Modules
Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
75 A 95 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) or I F(AV) @ 85°C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz I t
2
IRK.71
75 165 1665 1740 13.86 12.56 138.6
IRK.91
95 210 1785 1870 15.91 14.52 159.1
Units
A A A A KA 2s KA 2s KA 2√s V
o o
@ 50Hz @ 60Hz
I √t VRRM range TSTG TJ
(*) As AC switch.
2
400 to 1600 - 40 to 125 - 40 to125
C C
www.irf.com
1
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V
400 600 800 1000 1200 1400 1600
IRRM IDRM 125°C mA
V
500 700 900 1100 1300 1500 1700
V
400 600 800 1000 1200 1400 1600
www.DataSheet4U.com
IRK.71/ .91
06 08 10 12 14 16
15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2√t Max. I2√t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 250 mA 400 (1) I2t for time t x = I2√t x √tx (4) I > π x IAV 150 A/µs 1.59 1.58 V 138.6 0.82 0.85 3.00 2.90 VT(TO) Max. value of threshold 210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 KA2√s V mΩ KA s
2
IRK.71
IRK.91
Units
Conditions
180 o conduction, half sine wave, TC = 85o C
75
95
I(RMS)
t=8.3ms reapplied
or
I(RMS)
Sinusoidal half wave, Initial TJ = T J max.
t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied,TJ = TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = T J max TJ = TJ max TJ = 25°C Initial TJ = T J max.
TJ = 25 oC, from 0.67 V DRM , t r < 0.5 µs, t p > 6 µs I TM =π x I T(AV), I g = 500mA,
T J = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x π x I AV < I < π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
2
www.irf.com
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Triggering
Parameters
PGM IGM Max. peak gate power PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative
IRK.71
12 3.0 3.0 10 4.0 2.5 1.7 270 150 80
IRK.91
12 3.0 3.0
Units
W A
Conditions
www.DataSheet4U.com
V
TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
VGD IGD
0.25 6
V mA
TJ = 125o C, rated VDRM applied TJ = 125o C, rated VDRM applied
Blocking
Parameters
IRRM IDRM Max. peak reverse and off-state leakage current at VRRM , VDRM VINS RMS isolation voltage 2500 (1 min) 3500 (1 sec) 500 V V/µs 15 mA TJ = 125 oC, gate open circuit 50 Hz, circuit to base, all terminals shorted T J = 125 oC, linear to 0.67 VDRM , gate open circuit
IRK.71
IRK.91
U.