APT40N60B2CF

600V 40A 0.110Ω APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40N60LCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction FREDFET T-MaxTM TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated www.DataSheet4U.com Extreme dv/dt Rated Intrinsic Fast-Recovery Body Diode Extreme Low Reverse Recovery Charge Ideal For ZVS Applications Popular T-MAX™ or TO-264 Package G S D MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT40N60B2CF(G)_LCF(G) UNIT Volts 600 40 26 80 ±30 417 3.33 -55 to 150 260 80 20 7 4 Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C) Avalanche Current 7 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 690 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 20A) 0.110 4.2 3400 ±100 3 4 5 Ohms µA nA Volts 5-2005 0...