APT40M70B2LVFR

400V 57A APT40M70B2VFR *G APT40M70LVFR 0.070Ω APT40M70B2VFRG* APT40M70LVFRG* Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V ® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com T-MAX™ TO-264 LVFR T-MAX™ or TO-264 Package Faster Switching Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Avalanche Energy Rated FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified. APT40M70B2_LVFR(G) UNIT Volts Amps 400 57 228 ±30 ±40 520 4.16 -55 to 150 300 57 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps ...