APT40M35JVFR

APT40M35JVFR 400V 93A S G D 0.035Ω S POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com Faster SO 2 T- 27 "UL Recognized" ISOTOP ® Switching Avalanche Energy Rated FAST RECOVERY BODY DIODE G D Lower Leakage Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage S All Ratings: TC = 25°C unless otherwise specified. APT40M35JVFR UNIT Volts Amps 400 93 372 ±30 ±40 700 5.6 -55 to 150 300 93 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 93 0.035 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On...