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APT4020BVFRG Dataheets PDF



Part Number APT4020BVFRG
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT4020BVFRG DatasheetAPT4020BVFRG Datasheet (PDF)

400V 23A 0.20Ω APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO-247 D3PAK SVFR • Faster Switching • Avalanche Energy Rated D • Lowe.

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400V 23A 0.20Ω APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO-247 D3PAK SVFR • Faster Switching • Avalanche Energy Rated D • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS • TO-247 or Surface Mount D3Pak G S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT4020B_SVFR(G) 400 23 92 ±30 ±40 250 2 -55 to 150 300 23 30 960 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 23 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) IDSS Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 0.20 250 1000 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts Amps Ohms µA nA Volts 050-5635 Rev A 5-2006 DYNAMIC CHARACTERISTICS APT4020B_SVFR(G) Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 23A @ 25°C VGS = 15V VDD = 200V ID = 23A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT 2650 400 pF 180 120 16 nC 60 10 11 ns 38 7 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/dt trr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -23A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -23A, di/dt = 100A/µs) Reverse Recovery Charge Qrr (IS = -23A, di/dt = 100A/µs) IRRM Peak Recovery Current (IS = -23A, di/dt = 100A/µs) Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN TYP MAX UNIT 23 Amps 92 1.3 Volts 15 V/ns ? ns ? ? µC ? ? Amps ? THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT RθJC RθJA Junction to Case Junction to Ambient 0.50 40 °C/W 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 3.63mH, RG = 25Ω, Peak IL = 23A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 050-5635 Rev A 5-2006 ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION ID, DRAIN CURRENT (AMPERES) Typical Performance Curves 50 VGS=7V, 10V & 15V 6.5V 40 30 6V 20 5.5V 10 5V 4.5V 0 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 TJ = -55°C TJ = +25°C 40 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 30 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 20 ID, DRAIN CURRENT (AMPERES) 10 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 20 15 10 5 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 ID = 0.5 ID [Cont.] VGS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE .


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