Document
400V 23A 0.20Ω
APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
SVFR
• Faster Switching
• Avalanche Energy Rated
D
• Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS
• TO-247 or Surface Mount D3Pak
G
S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
APT4020B_SVFR(G) 400 23 92 ±30 ±40 250 2
-55 to 150 300 23 30 960
UNIT Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
23
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
0.20 250 1000 ±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT Volts Amps Ohms
µA
nA Volts
050-5635 Rev A 5-2006
DYNAMIC CHARACTERISTICS
APT4020B_SVFR(G)
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 200V ID = 23A @ 25°C
VGS = 15V VDD = 200V ID = 23A @ 25°C RG = 1.6Ω
MIN TYP MAX UNIT
2650
400
pF
180
120
16
nC
60
10
11 ns
38
7
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD dv/dt
trr
Characteristic / Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -23A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -23A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr
(IS = -23A, di/dt = 100A/µs)
IRRM
Peak Recovery Current (IS = -23A, di/dt = 100A/µs)
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
MIN TYP MAX UNIT 23 Amps 92 1.3 Volts 15 V/ns ? ns ?
? µC
? ?
Amps ?
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC RθJA
Junction to Case Junction to Ambient
0.50 40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.63mH, RG = 25Ω, Peak IL = 23A 5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5635 Rev A 5-2006 ZθJC, THERMAL IMPEDANCE (°C/W) PDM
0.5 D=0.5
0.2 0.1
0.1 0.05
0.05
0.01 0.005
0.02 0.01
SINGLE PULSE
Note:
t1
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
ID, DRAIN CURRENT (AMPERES)
Typical Performance Curves
50 VGS=7V, 10V & 15V
6.5V 40
30
6V
20
5.5V
10
5V
4.5V
0
0
40
80
120 160 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
50 TJ = -55°C
TJ = +25°C 40
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
30
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
ID, DRAIN CURRENT (AMPERES)
10 TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
25
ID, DRAIN CURRENT (AMPERES)
20
15
10
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.] VGS = 10V
2.0
1.5
1.0
0.5
0.0 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
.