APT4016BVFRG

400V 27A 0.16Ω APT4016BVFR APT4016SVFR APT4016BVFRG* APT4016SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V ® V® FREDFET BVFR TO -2 47 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com D3PAK SVFR Faster Switching Lower Leakage Avalanche Energy Rated TO-247 or Surface Mount D3Pak G D Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 S All Ratings: TC = 25°C unless otherwise specified. APT4016B_SVFR(G) UNIT Volts Amps 400 27 108 ±30 ±40 280 2.24 -55 to 150 300 27 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 2...