H5N2305PF

H5N2305PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0026-0200Z Rev.2.00 Jun.25.2004 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2305PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 35 140 35 140 18 60 2.08 150 –55 to +150 Rating V V A A A A A W °C /W °C °C Unit Avalanche current IAP Note3 Channel dissipation Pch Note2 www.DataSheet4U.com Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.2.00, Jun.25.2004, page 2 of 9 H5N2305PF Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance www.DataSheet4U.com Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Symbol Min V(BR)DSS 230 IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs — — 2.5 22 — — — —...