Document
Advanced Power Electronics Corp.
AP30G120SW
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching ▼ Low Saturation Voltage
VCES IC
VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
G C E
TO-3P
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
VCES
Collector-Emitter Voltage
1200
VGE Gate-Emitter Voltage
+30
IC@TC=25℃
Collector Current
60
IC@TC=100℃ ICM
Collector Current Pulsed Collector Current1
30 120
IF@TC=25℃
Diode Forward Current
20
IF@TC=100℃
Diode Forward Current
10
IFM Diode Pulse Forward Current
40
PD@TC=25℃
Maximum Power Dissipation
208
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
TL Maximum Lead Temp. for Soldering Purposes
300
, 1/8" from case for 5 seconds .
1200V 30A
C
E
Units V V A A A A A A W ℃ ℃ ℃
Notes:
1.Pulse width limited by max . junctio.