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AP30G120SW Dataheets PDF



Part Number AP30G120SW
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet AP30G120SW DatasheetAP30G120SW Datasheet (PDF)

Advanced Power Electronics Corp. AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage +30 IC@TC=25℃ Collector Current 60 IC@TC=100℃ ICM Collect.

  AP30G120SW   AP30G120SW


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Advanced Power Electronics Corp. AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage +30 IC@TC=25℃ Collector Current 60 IC@TC=100℃ ICM Collector Current Pulsed Collector Current1 30 120 IF@TC=25℃ Diode Forward Current 20 IF@TC=100℃ Diode Forward Current 10 IFM Diode Pulse Forward Current 40 PD@TC=25℃ Maximum Power Dissipation 208 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 TL Maximum Lead Temp. for Soldering Purposes 300 , 1/8" from case for 5 seconds . 1200V 30A C E Units V V A A A A A A W ℃ ℃ ℃ Notes: 1.Pulse width limited by max . junctio.


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