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S1PDB174

Sirectifier Semiconductors

Single Phase Bridge Rectifiers Modules

S1PDB174 Single Phase Bridge Rectifiers Modules _ + Type S1PDB174N08 S1PDB174N10 S1PDB174N12 S1PDB174N14 S1PDB174N16 S1P...


Sirectifier Semiconductors

S1PDB174

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Description
S1PDB174 Single Phase Bridge Rectifiers Modules _ + Type S1PDB174N08 S1PDB174N10 S1PDB174N12 S1PDB174N14 S1PDB174N16 S1PDB174N18 VRSM V 900 1100 1300 1500 1700 1900 VRRM V 800 1000 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") M6x10 7 94 80 72 26 26 + – 15 54 27 6.5 A + B - ~~ 12 25 66 Symbol Idav Idav o Test Conditions TC=100 C, module TA=35oC (RthCA=0.2K/W), module TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 174 139 2800 3300 2500 2750 39200 45000 31200 31300 -40...+150 150 -40...+125 6.5 C ~ E ~ 3 ~ ~ Unit A IFSM I2t A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s 30 A o C 2500 3000 _ 15% 5+ _ 15% 5+ 270 V~ Nm g Mounting torque (M6) Terminal connection torque (M6) typ. S1PDB174 Single Phase Bridge Rectifiers Modules Symbol IR VF VTO rT RthJC RthJK dS dA a VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=300A; TVJ=25oC o Test Conditions Characteristic Values _ 0.3 < _5 < _ 1.43 < 0.8 2.2 Unit mA V V m K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM per diode; 180 per module o 0.45 0.11 0.6 0.15 10 9.4 50 per diode; 180o per module Creeping distance on surface Creepage distance in air Max. allowable acceleration FEATURES * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking volta...




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