DatasheetsPDF.com

K4H560838D-TCB3

Samsung Semiconductor

256Mb D-die DDR Sdram


Description
256Mb Key Features Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe(DQS) Four banks operation Differential clock inputs(CK and CK) DLL aligns DQ and DQS transition with CK transition MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www.DataSheet4U.com -. Burst length (2, 4, 8) -. Burst ...



Samsung Semiconductor

K4H560838D-TCB3

File Download Download K4H560838D-TCB3 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)