Asymmetric Integrated Gate- Commutated Thyristor
VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
6500 4200 26×103 2.0 0.54 4000
V A A V mΩ V
Asymmetric Integrated Gate...
Description
VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
6500 4200 26×103 2.0 0.54 4000
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 42L6530
PRELIMINARY
Doc. No. 5SYA1246-00 Aug. 07
High snubberless turn-off rating Wide temperature range High www.DataSheet4U.com electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized, Note 1 Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage
Characteristic values
min
typ
max 6500 4000 17
Unit V V V Unit mA
Ambient cosmic radiation at sea level in open air. Gate Unit energized
VRRM min typ
Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C
max 50
Mechanical data (see Fig. 11, 12) 1)
Maximum rated values
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm
min 36 min 25.3 33 10
typ 40 typ 85
max 44 max 25.8 2.9
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height
439 40 173
mm mm mm
Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which dam...
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