CY62128E

CY62128E MoBL® 1-Mbit (128 K × 8) Static RAM 1-Mbit (128 K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C ■ Voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62128B ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A (Industrial) ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC, and 32-pin thin small outline package (TSOP) Type I packages Logic Block Diagram Functional Description The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operati...