W29NK50Z

STW29NK50Z N-CHANNEL 500 V - 0.105Ω - 31A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 www.DataSheet4U.com DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING I IDEAL FOR OFF-LINE POWER SUPPLIES I WELDING MACHINES I LIGHTING I Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STW29NK50Z MARKING W29NK50Z PACKAGE TO-247 PACKAGING TUBE Rev. 1 October 2004 1/10 STW29NK50Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM (*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20 K Ω) Gate- source Voltage Drain Current (continuous) at T C = 25°C Drain Current (continuous) at T C = 100°C Drain Current (pulsed) Total Dissipation at T C = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recover...