W29NK50ZD

STW29NK50ZD N-CHANNEL 500 V - 0.11Ω - 29A TO-247 Fast Diode SuperMESH™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STW29NK50ZD s s Figure 1: Package ID 29 A PW 350 W VDSS 500 V RDS(on) < 0.15 Ω TYPICAL RDS(on) = 0.11 Ω HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY s FAST INTERNAL RECOVERY TIME 3 2 1 TO-247 DESCRIPTION The Fast SuperMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. Figure 2: Internal Schematic Diagram APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE Table 2: Order Codes PART NUMBER STW29NK50ZD MARKING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE Rev. 2 December 2004 1/7 STW29NK50ZD Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) www.DataSheet4U.com Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 ± 30 29 18.27 116 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C dv/dt (1) Tstg...