MITSUBISHI
PM50RLB120
FLAT-BASE TYPE INSULATED PACKAGE
PM50RLB120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1. 9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 50% for the current rating of inverter part. • 3φ 50A, 1200V Current-sense IGBT type inverter • 25A, 1200V Current-sense regenerative brake IGBT • Mono...
PM50RLB120 PDF File
