EMC646SP16J

Preliminary EMC646SP16J 4Mx16 CellularRAM Document Title 4Mx16 bit CellularRAM Revision History www.DataSheet4U.com Revision No. 0.0 History Initial Draft Draft Date July 05,2007 Remark Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Zip Code : 690-717 The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 Preliminary EMC646SP16J 4Mx16 CellularRAM 64Mb Async/Page/Burst CellularRAM FEATURES - Sigle device supports asynchrous, page and burst operation - Vcc, VccQ voltages: 1.7V.1.95V VCC 1.7V.1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: www.DataSheet4U.com 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 38.5ns (4 clocks) @ 104 MHz , tACLK: 7ns @ 104 MHz - Page mode READ access: Sixteen-word page size Interpage READ access : 70ns Intrapage READ access : 20ns - Low power consumption: Asynchronous READ: <25mA Initial access, burst READ: (38.5ns [4 clocks] @ 104 MHz) <35mA Continuous burst READ: <30mA - Low-power features On-chip temperature compensated self refresh (TCSR) Partial array refresh (PAR) Deep Power-down(DPD) mode ...