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FQP8N25

250V N-Channel MOSFET

Description

FQP8N25 May 2000 QFET FQP8N25 250V N-Channel MOSFET General Description Features 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s pro...

Fairchild Semiconductor

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